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APD/Avalanche Photo Diode
The APD/avalanche photo diode (3G InGaAs pulse APD diode pins for OTDR) is a p-n junction photodetector made of silicon or germanium. By applying a reverse bias voltage to the p-n junction, the photons of the incident light will strike the electrons to pass them through the junction resulting in photoelectric current flows. When the applied reverse voltage increases, avalanche current flows will occur. The avalanche effect of the current carrier can be utilized to amplify the photoelectric signal in the detecting system so as to improve the sensitivity of the detector.
This series of photo diode has the features of small dark current, low operating voltage, and high sensitivity. It can operate in the pulse output mode or DC output mode. The product is commonly used in the long-distance transmission system, OTDR system, and the detection equipment of Raman backscattering system.
(If customers would like to know more about the details, please click here to download the following PDF file. )
Optical & Electrical Characteristics| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| Reverse Breakdown Voltage | VBR | 40 | 45 | 55 | V | ID = 100 μA |
| Temperature Coefficient of Reverse Breakdown Voltage1 | δ | 0.2 | %/°C | |||
| Dark Current | ID | 5 | 25 | nA | VR = VBR x 0.9 | |
| Multiplied Dark Current | IDM | 1 | 3 | nA | M = 2 to 10 | |
| Terminal Capacitance | Ct | 0.35 | pF | VR = VBR x 0.9, f = 1 MHz | ||
| Cut-off Frequency | fC | 2.5 | GHz | M = 10 | ||
| Quantum Efficiency | η | 76 | 90 | % | λ = 1310 nm, M = 1 | |
| 65 | 77 | λ = 1550 nm, M = 1 | ||||
| Responsivity | S | 0.85 | 0.90 | A/W | λ = 1310 nm, M = 1 | |
| 0.90 | 0.95 | λ = 1550 nm, M = 1 | ||||
| Excess Noise Factor | X | 0.7 | - | λ = 1310 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz | ||
| F | 5 | λ = 1550 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz | ||||
| Optical Return Loss | ORL | 30 | 40 | dB | SMF |
As a specialized APD/avalanche photo diode (3G InGaAs pulse APD diode pins for OTDR) manufacturer in China, we also offer CWDM diode laser module, butterfly fiber coupled laser diodes, and 3-10G InGaAs integrated pigtail detector module for wavelength division multiplexer, among others.
Related Names
Avalanche Photodetector | Laser Component for Long Distance Communication System | High Sensitive Semiconductor Electronic Device
Wuhan Shengshi Optical Technology Co. , Ltd.
Contact Person: Wendy
Skype: Wendy_laser
Tel.: +86-15902779619
Fax: +86-27-87172995
E-Mail: wendy@laserdiodeproduct.com
Website: www.laserdiodeproduct.com
